QUANTITATIVE MEASURING METHOD OF GROWTH STRIATIONS IN CZOCHRALSKI-GROWN SILICON CRYSTAL

被引：8

作者：

IMAI, M

SHIRAISHI, Y

SHIBATA, M

NODA, H

YATSURUGI, Y

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 07期

关键词：

D O I：

10.1149/1.2096129

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

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页码：1779 / 1783

页数：5

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