DEEP-LEVEL DEFECTS IN RED GAAS1-CHIPCHI LIGHT-EMITTING DIODES

被引：9

作者：

FORBES, L ^{[1
]}

VAUGHN, CK ^{[1
]}

机构：

[1] UNIV ARKANSAS, DEPT ELECT ENGN, FAYETTEVILLE, AR 72701 USA

来源：

PROCEEDINGS OF THE IEEE | 1974年 / 62卷 / 04期

关键词：

D O I：

10.1109/PROC.1974.9468

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：534 / 535

页数：2

共 18 条

[1] LIGHT-EMITTING DIODES
BERGH, AA
DEAN, PJ
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (02): : 156 - +
[2] VAPOR-PHASE EPITAXIAL MATERIALS FOR LED APPLICATIONS
CRAFORD, MG
GROVES, WO
[J]. PROCEEDINGS OF THE IEEE, 1973, 61 (07) : 862 - 880
[3] RADIATIVE LIFETIME IN GAAS1-X PX P-N-JUNCTIONS
EDMONDS, HD
SMITH, AW
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (07) : 382 - 384
[4] INADVERTENT DEEP CENTERS IN N-TYPE GAP FROM SCHOTTKY-BARRIER PHOTOCAPACITANCE
HAMILTON, B
SMITH, BL
[J]. APPLIED PHYSICS LETTERS, 1973, 22 (12) : 674 - 676
[5] PHOTOCAPACITANCE STUDIES OF OXYGEN DONOR IN GAP .2. CAPTURE CROSS-SECTIONS
HENRY, CH
KUKIMOTO, H
MILLER, GL
MERRITT, FR
[J]. PHYSICAL REVIEW B, 1973, 7 (06) : 2499 - 2507
[6] THERMAL IONIZATION RATES AND ENERGIES OF HOLES AT DOUBLE ACCEPTOR ZINC CENTERS IN SILICON
HERMAN, JM
SAH, CT
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 14 (02): : 405 - 415
[7] PHOTOCAPACITANCE STUDIES OF OXYGEN DONOR IN GAP I OPTICAL CROSS-SECTIONS, ENERGY-LEVELS, AND CONCENTRATION
KUKIMOTO, H
HENRY, CH
MERRITT, FR
[J]. PHYSICAL REVIEW B, 1973, 7 (06) : 2486 - 2499
[8] PHOTOCAPACITANCE STUDIES OF DEEP-DOUBLE ELECTRON-TRAP OXYGEN IN GALLIUM-PHOSPHIDE
KUKIMOTO, H
HENRY, CH
MILLER, GL
[J]. APPLIED PHYSICS LETTERS, 1972, 21 (06) : 251 - &
[9] TECHNIQUE FOR INVESTIGATION OF DEEP-LEVEL STATES IN DIFFUSED P-N-JUNCTION DEVICES - APPLICATION TO GAAS ELECTROLUMINESCENT DIODES
LO, W
YANG, ES
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (08) : 684 - 691
[10] DEPTH PROFILE OF CONCENTRATION OF DEEP-LEVEL IMPURITIES IN VAPOR-PHASE EPITAXIAL GALLIUM-ARSENIDE GROWN UNDER VARIOUS ARSENIC VAPOR-PRESSURES
OKAMOTO, H
SAKATA, S
SAKAI, K
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) : 1316 - 1326

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