THE EFFECT OF PRE-HEAT-TREATMENTS ON THE FORMATION KINETICS OF THERMAL DONORS IN SILICON

被引：10

作者：

GAWORZEWSKI, P ^{[1
]}

HILD, E ^{[1
]}

机构：

[1] RES INST TELECOMMUN,H-1525 BUDAPEST,HUNGARY

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1985年 / 92卷 / 01期

关键词：

D O I：

10.1002/pssa.2210920111

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：129 / 135

页数：7

共 14 条

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[6]

GAWORZEWSKI P, UNPUB

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[9]

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