MAGNETICALLY ENHANCED TRIODE ETCHING OF LARGE AREA SILICON MEMBRANES IN A MOLECULAR BROMINE PLASMA

被引：6

作者：

WOLFE, JC ^{[1
]}

SEN, S ^{[1
]}

PENDHARKAR, SV ^{[1
]}

MAUGER, P ^{[1
]}

SHIMKUNAS, AR ^{[1
]}

机构：

[1] NANOSTRUCT INC, Mountain View, CA 94043 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 06期

关键词：

D O I：

10.1116/1.585989

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The optimization of a process for etching 125 mm silicon membranes formed on 150 mm wafers and bonded to Pyrex rings are discussed. A magnetically enhanced triode etching system was designed to provide an intense, remote plasma surrounding the membrane while, at the same time, suppressing the discharge over the membrane itself. For the optimized molecular bromine process, the silicon etch rate is 40 nm/min and the selectivity relative to SiO2 is 160:1.

引用

页码：2716 / 2719

页数：4

共 13 条

[1] A MINIMUM STEP FABRICATION PROCESS FOR THE ALL-SILICON CHANNELING MASK [J].

ATKINSON, GM ;

BARTELT, JL ;

MIDDLETON, PL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01) :219-222

[2] THE ELECTRON-BEAM PROXIMITY PRINTING LITHOGRAPHY, A CANDIDATE FOR THE 0.35 AND 0.25 MICRON CHIP GENERATIONS [J].

BEHRINGER, U ;

HAUG, W ;

MEISSNER, K ;

ZIEMLICH, W ;

BOHLEN, H ;

BAYER, T ;

KULCKE, W ;

ROTHUIZEN, H ;

SASSO, G ;

VETTIGER, P .

MICROELECTRONIC ENGINEERING, 1991, 13 (1-4) :361-364

[3] MAGNETICALLY ENHANCED REACTIVE ION ETCHING OF SILICON IN BROMINE PLASMAS [J].

ELMASRY, AM ;

FONG, FO ;

WOLFE, JC ;

RANDALL, JN .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01) :257-262

[4]

FNG FO, 1990, MICROELECTRON ENG, V11, P449

[5] E-BEAM INDUCED X-RAY MASK REPAIR WITH OPTIMIZED GAS NOZZLE GEOMETRY [J].

KOHLMANN, KT ;

THIEMANN, M ;

BRUNGER, WH .

MICROELECTRONIC ENGINEERING, 1991, 13 (1-4) :279-282

[6] SILICON STENCIL MASKS FOR LITHOGRAPHY BELOW 0.25 MU-M BY ION-PROJECTION EXPOSURE [J].

MAUGER, PE ;

SHIMKUNAS, AR ;

WOLFE, JC ;

SEN, S ;

LOSCHNER, H ;

STENGL, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (06) :2819-2823

[7] MASKED ION-BEAM LITHOGRAPHY FOR SUBMICROMETER-GATE-LENGTH TRANSISTORS [J].

PANG, SW ;

LYSZCZARZ, TM ;

CHEN, CL ;

DONNELLY, JP ;

RANDALL, JN .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01) :215-218

[8] REACTIVE ION ETCHING OF SILICON [J].

SCHWARTZ, GC ;

SCHAIBLE, PM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :410-413

[9] FABRICATION OF LOW-STRESS SILICON STENCIL MASKS FOR ION-BEAM LITHOGRAPHY [J].

SEN, S ;

FONG, FO ;

WOLFE, JC ;

YEN, JJ ;

MAUGER, P ;

SHIMKUNAS, AR ;

LOSCHNER, H ;

RANDALL, JN .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06) :1802-1805

[10] LOW DISTORTION, LARGE AREA ION-BEAM PROXIMITY PRINTING FOR GAAS FIELD-EFFECT TRANSISTORS AND MONOLITHIC MICROWAVE INTEGRATED-CIRCUITS [J].

SEN, S ;

STUMBO, DP ;

FONG, FO ;

DAMM, GA ;

ENGLER, DW ;

WOLFE, JC ;

RANDALL, JN .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (06) :1941-1944

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