FABRICATION OF LOW-STRESS SILICON STENCIL MASKS FOR ION-BEAM LITHOGRAPHY

被引：10

作者：

SEN, S

FONG, FO

WOLFE, JC

YEN, JJ

MAUGER, P

SHIMKUNAS, AR

LOSCHNER, H

RANDALL, JN

机构：

[1] NANOSTRUCT INC,MT VIEW,CA 94043

[2] ION MICROFABRICAT SYST,A-1020 VIENNA,AUSTRIA

[3] TEXAS INSTRUMENTS INC,DALLAS,TX 75243

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 06期

关键词：

D O I：

10.1116/1.584461

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1802 / 1805

页数：4

共 12 条

[1] A TECHNIQUE FOR THE DETERMINATION OF STRESS IN THIN-FILMS
BROMLEY, EI
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 1364 - 1366
[2] SUB-0.5-MU-M LITHOGRAPHY WITH A NEW ION PROJECTION LITHOGRAPHY MACHINE USING SILICON OPEN STENCIL MASKS
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CSEPREGI, L
HEUBERGER, A
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STENGL, G
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06): : 2080 - 2084
[3] MAGNETICALLY ENHANCED REACTIVE ION ETCHING OF SILICON IN BROMINE PLASMAS
ELMASRY, AM
FONG, FO
WOLFE, JC
RANDALL, JN
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01): : 257 - 262
[4] HIGH-RESOLUTION FABRICATION PROCESS FOR SILICON ION MASKS
FONG, FO
SEN, S
STUMBO, DP
WOLFE, JC
RANDALL, JN
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06): : 2112 - 2114
[5] KOLECK B, 1989, IEEE T ELECTRON DEV, V36, P669
[6] CHARACTERIZATION OF THIN BORON-DOPED SILICON MEMBRANES BY DOUBLE-CRYSTAL X-RAY TOPOGRAPHY
MA, DI
QADRI, SB
PECKERAR, MC
TWIGG, ME
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06): : 1594 - 1599
[7] STUDY OF THE ETCH-STOP MECHANISM IN SILICON
PALIK, ED
FAUST, JW
GRAY, HF
GREENE, RF
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) : 2051 - 2059
[8] RANDALL JN, 1986, J VAC SCI TECHNOL A, V4, P777, DOI 10.1116/1.573812
[9] SILICON-NITRIDE STENCIL MASKS FOR HIGH-RESOLUTION ION LITHOGRAPHY PROXIMITY PRINTING
RANDALL, JN
FLANDERS, DC
ECONOMOU, NP
DONNELLY, JP
BROMLEY, EI
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 1152 - 1155
[10] THE THERMOMECHANICAL STABILITY OF ION-BEAM MASKS
RANDALL, JN
SIVASANKAR, R
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01): : 223 - 227

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