HIGH-RESOLUTION FABRICATION PROCESS FOR SILICON ION MASKS

被引：6

作者：

FONG, FO ^{[1
]}

SEN, S ^{[1
]}

STUMBO, DP ^{[1
]}

WOLFE, JC ^{[1
]}

RANDALL, JN ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,DALLAS,TX 75265

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 06期

关键词：

D O I：

10.1116/1.584095

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2112 / 2114

页数：3

共 11 条

[1] A MINIMUM STEP FABRICATION PROCESS FOR THE ALL-SILICON CHANNELING MASK
ATKINSON, GM
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MIDDLETON, PL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01): : 219 - 222
[2] MASKED ION-BEAM LITHOGRAPHY - A FEASIBILITY DEMONSTRATION FOR SUBMICROMETER DEVICE FABRICATION
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SLAYMAN, CW
WOOD, JE
CHEN, JY
MCKENNA, CM
MINNING, CP
COAKLEY, JF
HOLMAN, RE
PERRYGO, CM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1166 - 1171
[3] RESOLUTION LIMITS OF PMMA RESIST FOR EXPOSURE WITH 50 KV ELECTRONS
BROERS, AN
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (01) : 166 - 170
[4] MAGNETICALLY ENHANCED REACTIVE ION ETCHING OF SILICON IN BROMINE PLASMAS
ELMASRY, AM
FONG, FO
WOLFE, JC
RANDALL, JN
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01): : 257 - 262
[5] 50-NM SILICON STRUCTURES FABRICATED WITH TRILEVEL ELECTRON-BEAM RESIST AND REACTIVE-ION ETCHING
JACKEL, LD
HOWARD, RE
HU, EL
TENNANT, DM
GRABBE, P
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (03) : 268 - 270
[6] PROGRESS IN SELF-DEVELOPING METAL FLUORIDE RESISTS
KRATSCHMER, E
ISAACSON, M
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01): : 369 - 373
[7] FABRICATION OF A HIGH-DENSITY STORAGE MEDIUM FOR ELECTRON-BEAM MEMORY
ORO, JA
WOLFE, JC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 1088 - 1090
[8] CHANNELING TRANSMISSION OF PROTONS THROUGH THIN SILICON MEMBRANES
PARMA, EJ
HART, RR
BARTELT, JL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01): : 228 - 231
[9] THE CONTRAST OF ION-BEAM STENCIL MASKS
RANDALL, JN
STERN, LA
DONNELLY, JP
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01): : 201 - 204
[10] RANDALL JN, 1986, J VAC SCI TECHNOL A, V4, P777, DOI 10.1116/1.573812

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