PROXIMITY EFFECT CORRECTION AT 10 KEV USING GHOST AND SIZING FOR 0.4-MU-M MASK LITHOGRAPHY

被引：6

作者：

MURAY, A ^{[1
]}

LOZES, RL ^{[1
]}

MILNER, K ^{[1
]}

HUGHES, G ^{[1
]}

机构：

[1] DUPONT PHOTOMASK,DANBURY,CT 06810

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 06期

关键词：

D O I：

10.1116/1.585157

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An investigation of proximity effect correction at 10 keV using GHOST(TM) and sizing indicates 0.4 mu-m design targets can be achieved on a raster scan lithography system. It is shown through simulation and experiment that the proximity effect can be effectively eliminated by use of GHOST. Sizing provides an additional degree of freedom to control process latitude and wall angle.

引用

收藏

页码：1775 / 1779

页数：5

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