HIGH-POWER CW OPERATION OF INGAAS/GAAS SURFACE-EMITTING LASERS WITH 45-DEGREES INTRACAVITY MICRO-MIRRORS

被引：9

作者：

OU, SS

JANSEN, M

YANG, JJ

MAWST, LJ

ROTH, TJ

机构：

[1] TRW, Research Center, Space and Technology Group, Redondo Beach

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 17期

关键词：

D O I：

10.1063/1.106140

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-power cw operation of horizontal-cavity, monolithic InGaAs/GaAs surface-emitting lasers with all dry etched micro-mirrors has been demonstrated for the first time. The 45-degrees and 90-degrees micro-mirrors of the devices were fabricated by ion-beam etching and reactive ion etching techniques, respectively. Threshold-current densities of less than 500 A/cm2, external differential quantum efficiencies of 10% (0.12 W/A) from the emitting facet, and output powers in excess of 100 mW were achieved from uncoated devices driven under cw operation.

引用

收藏

页码：2085 / 2087

页数：3

相关论文

共 14 条

[1] LOW DEGRADATION RATE IN STRAINED INGAAS/ALGAAS SINGLE QUANTUM-WELL LASERS [J].

BOUR, DP ;

GILBERT, DB ;

FABIAN, KB ;

BEDNARZ, JP ;

ETTENBERG, M .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (03) :173-174

[2] INGAAS/ALGAAS STRAINED SINGLE QUANTUM-WELL DIODE-LASERS WITH EXTREMELY LOW THRESHOLD CURRENT-DENSITY AND HIGH-EFFICIENCY [J].

CHOI, HK ;

WANG, CA .

APPLIED PHYSICS LETTERS, 1990, 57 (04) :321-323

[3] COHERENT, MONOLITHIC 2-DIMENSIONAL STRAINED INGAAS/ALGAAS QUANTUM WELL LASER ARRAYS USING GRATING SURFACE EMISSION [J].

EVANS, GA ;

BOUR, DP ;

CARLSON, NW ;

HAMMER, JM ;

LURIE, M ;

BUTLER, JK ;

PALFREY, SL ;

AMANTEA, R ;

CARR, LA ;

HAWRYLO, FZ ;

JAMES, EA ;

KIRK, JB ;

LIEW, SK ;

REICHERT, WF .

APPLIED PHYSICS LETTERS, 1989, 55 (26) :2721-2723

[4]

JEWELL JL, 1989, ELECTRON LETT, V25, P1124

[5] PSEUDOMORPHIC INYGA1-YAS/GAAS/ALXGA1-XAS SINGLE QUANTUM-WELL SURFACE-EMITTING LASERS WITH INTEGRATED 45-DEGREES BEAM DEFLECTORS [J].

KIM, JH ;

LARSSON, A ;

LEE, LP .

APPLIED PHYSICS LETTERS, 1991, 58 (01) :7-9

[6] SURFACE-EMITTING GAINASP-INP LASER WITH LOW THRESHOLD CURRENT AND HIGH-EFFICIENCY [J].

LIAU, ZL ;

WALPOLE, JN .

APPLIED PHYSICS LETTERS, 1985, 46 (02) :115-117

[7] HIGH-SPEED INGAAS/GAAS STRAINED MULTIPLE QUANTUM-WELL LASERS WITH LOW DAMPING [J].

NAGARAJAN, R ;

FUKUSHIMA, T ;

BOWERS, JE ;

GEELS, RS ;

COLDREN, LA .

APPLIED PHYSICS LETTERS, 1991, 58 (21) :2326-2328

[8] HIGH-PERFORMANCE SURFACE-EMITTING LASERS WITH 45-DEGREES INTRACAVITY MICROMIRRORS [J].

OU, SS ;

YANG, JJ ;

JANSEN, M ;

SERGANT, M ;

MAWST, LJ ;

WILCOX, JZ .

APPLIED PHYSICS LETTERS, 1991, 58 (01) :16-18

[9] 5-W GAAS/GAALAS LASER-DIODES WITH A REACTIVE ION ETCHED FACET [J].

OU, SS ;

YANG, JJ ;

JANSEN, M .

APPLIED PHYSICS LETTERS, 1990, 57 (18) :1861-1863

[10] HIGH-POWER CW OPERATION OF GAAS/GAALAS SURFACE-EMITTING LASERS MOUNTED IN THE JUNCTION-UP CONFIGURATION [J].

OU, SS ;

JANSEN, M ;

YANG, JJ ;

SERGANT, M .

APPLIED PHYSICS LETTERS, 1991, 59 (09) :1037-1039