HIGH-EFFICIENCY GAAS SOLAR-CELLS GROWN BY MOLECULAR-BEAM EPITAXY

被引：19

作者：

MELLOCH, MR

TOBIN, SP

STELLWAG, TB

BAJGAR, C

KESHAVARZI, A

LUNDSTROM, MS

EMERY, K

机构：

[1] SPIRE CORP,BEDFORD,MA 01730

[2] SOLAR ENERGY RES INST,GOLDEN,CO 80401

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 02期

关键词：

D O I：

10.1116/1.585031

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：379 / 383

页数：5

共 16 条

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[9] GAALAS/GAAS SOLAR-CELLS GROWN BY MOLECULAR-BEAM EPITAXY - MATERIAL PROPERTIES AND DEVICE PARAMETERS [J].

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[10] REDUCTION OF SURFACE-DEFECTS IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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APPLIED PHYSICS LETTERS, 1987, 51 (17) :1340-1342

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