PREANNEAL EFFECT ON THE RING-SHAPED DISTRIBUTION OF OXYGEN PRECIPITATES IN CZOCHRALSKI-GROWN SILICON

被引：11

作者：

ONO, H ^{[1
]}

IKARASHI, T ^{[1
]}

KIMURA, S ^{[1
]}

TANIKAWA, A ^{[1
]}

机构：

[1] NEC CORP LTD,MICROELECTR RES LABS,TSUKUBA,IBARAKI 305,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 01期

关键词：

D O I：

10.1063/1.357059

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An anomalous ring-shaped distribution of oxygen precipitates in Czochralski-grown Si is investigated, using x-ray-diffraction topography and Fourier transform infrared spectroscopy. The appearance of the ring area, corresponding to a region of oxidation-induced stacking faults, strongly depends on the preanneal before the precipitation anneal at 1000-degrees-C. The single precipitation anneal at an elevated temperature without any preanneal maintains the distribution of precipitation nuclei formed at 450-degrees-C during cooling from crystal growth; however, the ring-shaped distribution is not affected by the existence of thermal donors. Therefore, it is concluded that the precipitation nuclei formed at 450-degrees-C do not have any relationship to thermal donors.

引用

页码：621 / 623

页数：3

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