RING-DISTRIBUTION OF OXYGEN PRECIPITATES IN CZOCHRALSKI SILICON REVEALED BY LOW-TEMPERATURE INFRARED-ABSORPTION SPECTROSCOPY

被引：14

作者：

ONO, H ^{[1
]}

IKARASHI, T ^{[1
]}

机构：

[1] NEC CORP LTD,MICROELECTR RES LABS,TSUKUBA,IBARAKI 305,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 24期

关键词：

D O I：

10.1063/1.110181

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The inhomogeneous distribution of oxygen precipitates was investigated in a Czochralski-grown silicon crystal which contained a ring-shaped distribution of oxidation-induced stacking faults. After a two-step anneal the infrared absorption due to two types of oxygen precipitates was mapped along the wafer radius by using Fourier-transform spectroscopy at liquid-He temperature. The low-temperature mapping technique reveals that the generation process of precipitates is different in the ring area from the rest of the wafer.

引用

页码：3303 / 3305

页数：3

共 7 条

[1] A STUDY OF OXYGEN PRECIPITATION IN SILICON USING HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY, SMALL-ANGLE NEUTRON-SCATTERING AND INFRARED-ABSORPTION [J].

BERGHOLZ, W ;

BINNS, MJ ;

BOOKER, GR ;

HUTCHISON, JC ;

KINDER, SH ;

MESSOLORAS, S ;

NEWMAN, RC ;

STEWART, RJ ;

WILKES, JG .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1989, 59 (05) :499-522

[2]

BORGHESI A, 1991, J APPL PHYS, V69, P7252

[3] INFRARED SPECTROSCOPICAL AND TEM INVESTIGATIONS OF OXYGEN PRECIPITATION IN SILICON-CRYSTALS WITH MEDIUM AND HIGH OXYGEN CONCENTRATIONS [J].

GAWORZEWSKI, P ;

HILD, E ;

KIRSCHT, FG ;

VECSERNYES, L .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 85 (01) :133-147

[4] FORMATION PROCESS OF STACKING-FAULTS WITH RINGLIKE DISTRIBUTION IN CZ-SI WAFERS [J].

HASEBE, M ;

TAKEOKA, Y ;

SHINOYAMA, S ;

NAITO, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (11) :L1999-L2002

[5] INFRARED-ABSORPTION SPECTRA OF SIO2 PRECIPITATES OF VARIOUS SHAPES IN SILICON - CALCULATED AND EXPERIMENTAL [J].

HU, SM .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) :5945-5948

[6] PRECIPITATION AND REDISTRIBUTION OF OXYGEN IN CZOCHRALSKI-GROWN SILICON [J].

SHIMURA, F ;

TSUYA, H ;

KAWAMURA, T .

APPLIED PHYSICS LETTERS, 1980, 37 (05) :483-486

[7] THERMODYNAMIC AND KINETIC CONSIDERATIONS ON THE EQUILIBRIUM SHAPE FOR THERMALLY INDUCED MICRODEFECTS IN CZOCHRALSKI SILICON [J].

TILLER, WA ;

HAHN, S ;

PONCE, FA .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (09) :3255-3266

← 1 →