OBSERVATION OF RING-DISTRIBUTED MICRODEFECTS IN CZOCHRALSKI-GROWN SILICON-WAFERS WITH A SCANNING PHOTON MICROSCOPE AND ITS DIAGNOSTIC APPLICATION TO DEVICE PROCESSING

被引：27

作者：

SHIMIZU, H ^{[1
]}

MUNAKATA, C ^{[1
]}

HONMA, N ^{[1
]}

AOKI, S ^{[1
]}

KOSAKA, Y ^{[1
]}

机构：

[1] HITACHI LTD, CENT RES LAB, KOKUBUNJI, TOKYO 185, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1992年 / 31卷 / 6A期

关键词：

CZOCHRALSKI-GROWN SILICON CRYSTAL; INTERSTITIAL OXYGEN; OXIDE PRECIPITATE; OXIDATION-INDUCED STACKING FAULT; PUNCHED-OUT DISLOCATION LOOP; AC SURFACE PHOTOVOLTAGE; SCANNING PHOTON MICROSCOPE;

D O I：

10.1143/JJAP.31.1817

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A scanning photon microscope (SPM) based on ac surface photovoltage imaging is applied to observe oxygen-related microdefects which are distributed in a ring in oxidized Czochralski-grown silicon wafers, and morphological and microstructural characteristics of the microdefects are then analyzed. The overall distribution of the ring-shaped region revealed by the SPM correspond well to that observed with X-ray topography. The SPM is able to differentiate deteriorated regions as different image contrasts, where stacking faults or oxide precipitates accompanying punched-out dislocation loops exist.

引用

页码：1817 / 1822

页数：6

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