ISOTOPIC STUDIES OF OXIDATION OF SI3N4 AND SI USING SIMS

被引：20

作者：

DU, HH

HOUSER, CA

TRESSLER, RE

SPEAR, KE

PANTANO, CG

机构：

[1] Department of Materials Science and Engineering, The Pennsylvania State University, University Park

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1990年 / 137卷 / 02期

关键词：

D O I：

10.1149/1.2086543

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

[No abstract available]

引用

页码：741 / 742

页数：2

共 13 条

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[7] ISOTOPIC TRACER STUDIES OF OXYGEN-TRANSPORT THROUGH SIO2-FILMS AT 1000-DEGREES-C USING SECONDARY ION MASS-SPECTROMETRY [J].

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HELMS, CR .

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[8]

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[9]

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