A 26-CM ELECTRON-CYCLOTRON-RESONANCE ION-SOURCE FOR REACTIVE ION-BEAM ETCHING OF SIO2 AND SI

被引：41

作者：

MIYAMURA, M

TSUKAKOSHI, O

KOMIYA, S

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 20卷 / 04期

关键词：

D O I：

10.1116/1.571659

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：986 / 988

页数：3

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