MOBILITY OF 2 DIMENSIONAL ELECTRON-GAS IN A DELTA-FET

被引：1

作者：

BASU, PK

BHATTACHARYYA, K

机构：

来源：

JOURNAL DE PHYSIQUE | 1987年 / 48卷 / C-5期

关键词：

D O I：

10.1051/jphyscol:1987553

中图分类号：

学科分类号：

摘要：

引用

页码：251 / 254

页数：4

共 10 条

[1] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].

ANDO, T ;

FOWLER, AB ;

STERN, F .

REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672

[2] LATTICE SCATTERING MOBILITY OF A TWO-DIMENSIONAL ELECTRON-GAS IN GAAS [J].

BASU, PK ;

NAG, BR .

PHYSICAL REVIEW B, 1980, 22 (10) :4849-4852

[3] MOBILITY OF TWO-DIMENSIONAL ELECTRON-GAS IN JFETS LIMITED BY POLAR-OPTIC AND IMPURITY SCATTERING [J].

BASU, PK ;

BHATTACHARYYA, K ;

NAG, BR .

SOLID STATE COMMUNICATIONS, 1983, 48 (11) :981-984

[4] HEMT TECHNOLOGY - POTENTIAL AND ADVANCES [J].

MIMURA, T ;

ABE, M ;

SHIBATOMI, A ;

KOBAYASHI, M .

SURFACE SCIENCE, 1986, 174 (1-3) :343-351

[5] THE ELECTRON PHONON INTERACTION IN QUASI-2-DIMENSIONAL SEMICONDUCTOR QUANTUM-WELL STRUCTURES [J].

RIDLEY, BK .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (28) :5899-5917

[6] POLAR OPTIC PHONON-SCATTERING OF 2 DIMENSIONAL ELECTRON-GAS IN A RECTANGULAR POTENTIAL WELL [J].

ROY, JB ;

BASU, PK ;

NAG, BR .

SOLID STATE COMMUNICATIONS, 1981, 40 (04) :491-493

[7] THE DELTA-DOPED FIELD-EFFECT TRANSISTOR (DELTA-FET) [J].

SCHUBERT, EF ;

FISCHER, A ;

PLOOG, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) :625-632

[8] ELECTRON SUBBAND STRUCTURE IN SELECTIVELY DOPED N-ALXGA1-XAS/GAAS HETEROSTRUCTURES [J].

SCHUBERT, EF ;

PLOOG, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) :1868-1873

[9] THE DELTA-DOPED FIELD-EFFECT TRANSISTOR [J].

SCHUBERT, EF ;

PLOOG, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (08) :L608-L610

[10] PHONON-LIMITED MOBILITY IN GAALAS/GAAS HETEROSTRUCTURES [J].

VINTER, B .

APPLIED PHYSICS LETTERS, 1984, 45 (05) :581-582

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