STRUCTURE AND PROPERTIES OF (TI1-XALX)N FILMS PREPARED BY REACTIVE SPUTTERING

被引：50

作者：

TANAKA, Y

GUR, TM

KELLY, M

HAGSTROM, SB

IKEDA, T

机构：

[1] STANFORD UNIV,CTR MAT RES,STANFORD,CA 94305

[2] KOBE STEEL LTD,MAT RES LAB,NISHI KU,KOBE 65122,JAPAN

来源：

THIN SOLID FILMS | 1993年 / 228卷 / 1-2期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0040-6090(93)90607-Q

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

(Ti1-xAlx)N films with several different Ti-to-Al ratios were deposited on silicon substrates by reactive cosputtering from Ti and Al targets in an Ar-N2 discharge. The crystal structure of the films was found to be cubic B1 type up to 50 mol.% AlN content. With further increase in the Al content, the films of (Ti0.31Al0.69)N and (Ti0.29Al0.71)N were found to have mixed phases of hexagonal and cubic structures. The (Ti1-xAlx) N films had a well-developed cubic columnar structure with open voids which rendered lower hardness values than for stoichiometric single-crystal TiN.

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页码：238 / 241

页数：4

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