EFFECT OF BORON ON THE DEEP DONORS (DX CENTERS) IN GAAS-SI

被引：8

作者：

LI, MF

YU, PY

SHAN, W

HANSEN, W

WEBER, ER

机构：

[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & CHEM SCI,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,CTR ADV MAT,BERKELEY,CA 94720

[3] UNIV CALIF BERKELEY,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 14期

关键词：

D O I：

10.1063/1.100710

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1344 / 1346

页数：3

共 23 条

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[5]

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[7] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].

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JAROS, M .

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[8]

LANG DV, 1985, DEEP CTR SEMICONDUCT, P489

[9] LATTICE-RELAXATION OF PRESSURE-INDUCED DEEP CENTERS IN GAAS-SI [J].

LI, MF ;

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WEBER, ER ;

HANSEN, W .

APPLIED PHYSICS LETTERS, 1987, 51 (05) :349-351

[10] PHOTOCAPACITANCE STUDY OF PRESSURE-INDUCED DEEP DONORS IN GAAS-SI [J].

LI, MF ;

YU, PY ;

WEBER, ER ;

HANSEN, W .

PHYSICAL REVIEW B, 1987, 36 (08) :4531-4534

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