DEPOSITION AND PROPERTIES OF REACTIVELY SPUTTERED RUTHENIUM DIOXIDE FILMS

被引：39

作者：

SAKIYAMA, K ^{[1
]}

ONISHI, S ^{[1
]}

ISHIHARA, K ^{[1
]}

ORITA, K ^{[1
]}

KAJIYAMA, T ^{[1
]}

HOSODA, N ^{[1
]}

HARA, T ^{[1
]}

机构：

[1] HOSEI UNIV,TOKYO 184,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1993年 / 140卷 / 03期

关键词：

D O I：

10.1149/1.2056168

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Ruthenium dioxide (RuO2) films for diffusion barrier layers are deposited by reactive sputtering in oxygen atmospheres at different conditions. Stoichiometric RuO2 films are deposited at oxygen partial pressures above 4.8 mTorr. When annealing is done for this film, a (101) RuO2 grain rather than a preferential (110) RuO2 is grown. Stoichiometric RuO2 films can be deposited at lower oxygen partial pressures when the deposition is performed at lower power. For this film at lower power, however, (101) RuO2 grain is preferentially grown with this annealing. A resistivity of 63.5 mu OMEGA-cm is obtained at 900-degrees-C.

引用

页码：834 / 839

页数：6

共 19 条

[1] PZT THIN-FILM PREPARATION ON PT-TI ELECTRODE BY RF-SPUTTERING [J].