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- [2] LIQUIDUS LINE AND GIBBS FREE ENERGY OF FORMATION OF A CRYSTALLINE COMPOUND AMBN(C) .2. ANALYSIS OF LIQUIDUS LINES OF INSB, INAS, GASB, AND GAAS[J]. METALLURGICAL TRANSACTIONS, 1971, 2 (12): : 3377 - &BREBRICK, RF
- [3] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES[J]. PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) : 299 - 358BURTON, WKCABRERA, NFRANK, FC
- [4] MOLECULAR-BEAM EPITAXY (MBE) OF IN1-XGAXAS AND GASB1-YASY[J]. APPLIED PHYSICS LETTERS, 1977, 31 (11) : 759 - 761CHANG, CALUDEKE, RCHANG, LLESAKI, L
- [5] LATTICE-MISMATCHED HETEROEPITAXIAL INTERFACE OF GAASYSB1-Y ON GAAS SUBSTRATES[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02): : 528 - 531CHENG, HKOYANAGI, TMILNES, AG
- [6] ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS0.5SB0.5[J]. APPLIED PHYSICS LETTERS, 1984, 44 (07) : 677 - 679CHERNG, MJSTRINGFELLOW, GGCOHEN, RM
- [7] TEMPERATURE-DEPENDENCE OF MOLECULAR-BEAM EPITAXIAL-GROWTH RATES FOR INXGA1-XAS AND INXAL1-XAS[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (09): : 1441 - 1442CHIKA, SKATO, HNAKAYAMA, MSANO, N
- [8] MOLECULAR-BEAM EPITAXY OF GASB0.5AS0.5 AND ALXGA1-XSBYAS1-Y LATTICE MATCHED TO INP[J]. APPLIED PHYSICS LETTERS, 1985, 46 (04) : 408 - 410CHIU, THTSANG, WTCHU, SNGSHAH, JDITZENBERGER, JA
- [9] THE ORGANO-METALLIC VPE GROWTH OF GASB AND GAAS1-XSBX USING TRIMETHYLANTIMONY[J]. JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (06) : 1001 - 1010COOPER, CBSAXENA, RRLUDOWISE, MJ
- [10] INTERACTION KINETICS OF AS4 AND GA ON [100] GAAS SURFACES USING A MODULATED MOLECULAR-BEAM TECHNIQUE[J]. SURFACE SCIENCE, 1975, 50 (02) : 434 - 450FOXON, CTJOYCE, BA