QUANTITATIVE-ANALYSIS FOR CH3 RADICALS IN LOW-TEMPERATURE GROWTH OF 3C-SIC ON SI(001) CLEAN SURFACE

被引：18

作者：

HATAYAMA, T

FUYUKI, T

MATSUNAMI, H

机构：

[1] Department of Electronic Science and Engineering, Kyoto University, Sakyo, Kyoto, 606-01, Yoshidahonmachi

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 9A期

关键词：

CH3; RADICAL; SILICON; 3C-SIC; CARBONIZATION; GAS SOURCE MOLECULAR BEAM EPITAXY; THRESHOLD IONIZATION QUADRUPOLE MASS SPECTROSCOPY;

D O I：

10.1143/JJAP.34.L1117

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using cracked propane (C3H8), carbonization of a Si(001) clean surface with a (2 x 1) structure can be realized reproducibly at as low as 750 degrees C in gas source molecular beam epitaxy. The carbonized layer indicates single-crystalline 3C-SiC, and surface morphology is very smooth. Methyl (CH3) radicals in a cracked-C3H8 molecular beam can be detected with a mass spectrometer utilizing a threshold ionization technique. The number of CH3 radicals is estimated, and it can reach up to 3.0 x 10(11) cm(-3) with a C3H8 flow rate of 0.8 seem and a cracker temperature of 1200 degrees C. Based on quantitative analysis, the condensation coefficient of CH3 radicals in carbonization is discussed.

引用

收藏

页码：L1117 / L1120

页数：4

相关论文

共 12 条

[1] TOTAL AND PARTIAL ELECTRON COLLISIONAL IONIZATION CROSS-SECTIONS FOR CH4, C2H6, SIH4, AND SI2H6 [J].

CHATHAM, H ;

HILS, D ;

ROBERTSON, R ;

GALLAGHER, A .

JOURNAL OF CHEMICAL PHYSICS, 1984, 81 (04) :1770-1777

[2] ABSOLUTE PARTIAL AND TOTAL ELECTRON-IMPACT IONIZATION CROSS-SECTIONS FOR C3H8 FROM THRESHOLD UP TO 950 EV [J].

GRILL, V ;

WALDER, G ;

MARGREITER, D ;

RAUTH, T ;

POLL, HU ;

SCHEIER, P ;

MARK, TD .

ZEITSCHRIFT FUR PHYSIK D-ATOMS MOLECULES AND CLUSTERS, 1993, 25 (03) :217-226

[3] CONTROLLED CARBONIZATION OF SI(001) SURFACE USING HYDROCARBON RADICALS IN ULTRAHIGH-VACUUM [J].

HATAYAMA, T ;

TARUI, Y ;

YOSHINOBU, T ;

FUYUKI, T ;

MATSUNAMI, H .

JOURNAL OF CRYSTAL GROWTH, 1994, 136 (1-4) :333-337

[4] AN OVERALL AND DETAILED KINETIC-STUDY OF THE PYROLYSIS OF PROPANE [J].

HAUTMAN, DJ ;

SANTORO, RJ ;

DRYER, FL ;

GLASSMAN, I .

INTERNATIONAL JOURNAL OF CHEMICAL KINETICS, 1981, 13 (02) :149-172

[5] HETERO-EPITAXIAL GROWTH OF CUBIC SILICON-CARBIDE ON FOREIGN SUBSTRATES [J].

MATSUNAMI, H ;

NISHINO, S ;

ONO, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) :1235-1236

[6] LOW-TEMPERATURE GROWTH OF 3C-SIC BY THE GAS SOURCE MOLECULAR-BEAM EPITAXIAL METHOD [J].

MOTOYAMA, S ;

KANEDA, S .

APPLIED PHYSICS LETTERS, 1989, 54 (03) :242-243

[7] ELECTRON-IMPACT DISSOCIATION OF METHANE INTO CH3 AND CH2 RADICALS .2. ABSOLUTE CROSS-SECTIONS [J].

NAKANO, T ;

TOYODA, H ;

SUGAI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (11A) :2912-2915

[8]

PANISH M, 1993, GAS SOURCE MOL BEAM

[9] FABRICATION OF INVERSION-TYPE N-CHANNEL MOSFETS USING CUBIC-SIC ON SI(100) [J].

SHIBAHARA, K ;

SAITO, T ;

NISHINO, S ;

MATSUNAMI, H .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) :692-693

[10] MASS SPECTROSCOPIC INVESTIGATION OF THE CH3 RADICALS IN A METHANE RF DISCHARGE [J].

TOYODA, H ;

KOJIMA, H ;

SUGAI, H .

APPLIED PHYSICS LETTERS, 1989, 54 (16) :1507-1509