OPTIMAL LOW-FREQUENCY NOISE CRITERIA USED AS A RELIABILITY TEST FOR BJTS AND EXPERIMENTAL RESULTS

被引:19
作者
DAI, YS
机构
[1] Department of Electronics Engineering, Jilin University of Technology, Changchun
来源
MICROELECTRONICS AND RELIABILITY | 1991年 / 31卷 / 01期
关键词
D O I
10.1016/0026-2714(91)90350-G
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Two basic problems in the application of noise criteria to reliability testing are considered. First, the need to look at all noise mechanisms rather than noise at a specific frequency is emphasized, and noise criteria using both 1/f noise and g-r noise are established. Second, the physical mechanisms which explain the low noise level of some failed devices are discussed, and the optimal noise threshold levels are found for minimum error during reliability testing. Reliability testing results for 1000 BJTs (3DG6) show that the failure rate of devices which initially exhibit high noise is about 2-3 times higher than for devices which initially have low noise. This means that the life expectancy of BJTs with a low noise level (using optimal noise criteria) is increased by a factor of 1.5-2.5; thus, noise measurements could be a useful reliability screen classification method for BJTs.
引用
收藏
页码:75 / 78
页数:4
相关论文
共 12 条
[1]   EXCESS NOISE SOURCES DUE TO DEFECTS IN FORWARD BIASED JUNCTIONS [J].
BLASQUEZ, G .
SOLID-STATE ELECTRONICS, 1978, 21 (11-1) :1425-1430
[3]   CORRELATION BETWEEN LOW-FREQUENCY NOISE AND LOW-TEMPERATURE PERFORMANCE OF TWO-DIMENSIONAL ELECTRON-GAS FETS [J].
DIEUDONNE, JM ;
POUYSEGUR, M ;
GRAFFEUIL, J ;
CAZAUX, JL .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) :572-575
[4]  
HSU ST, 1970, SOLID STATE ELECT, V13, P844
[5]   THE STABILITY OF POLYCRYSTALLINE SILICON THIN-FILM RESISTORS MEASURED USING EXCESS NOISE [J].
JONES, BK ;
MZUNZU, ESC .
MICROELECTRONICS AND RELIABILITY, 1989, 29 (04) :543-544
[6]   PRESENCE OF MOBILITY-FLUCTUATION 1/F NOISE IDENTIFIED IN SILICON P+NP TRANSISTORS [J].
KILMER, J ;
VANDERZIEL, A ;
BOSMAN, G .
SOLID-STATE ELECTRONICS, 1983, 26 (01) :71-74
[7]   ON 1/F MOBILITY FLUCTUATIONS IN BIPOLAR-TRANSISTORS [J].
KLEINPENNING, TGM .
PHYSICA B & C, 1986, 138 (03) :244-252
[8]   NOISE PHENOMENA ASSOCIATED WITH DISLOCATIONS IN BIPOLAR-TRANSISTORS [J].
MIHAILA, M ;
AMBERIADIS, K .
SOLID-STATE ELECTRONICS, 1983, 26 (02) :109-&
[9]   1/F, G-R AND BURST NOISE INDUCED BY EMITTER-EDGE DISLOCATIONS IN BIPOLAR-TRANSISTORS [J].
MIHAILA, M ;
AMBERIADIS, K ;
VANDERZIEL, A .
SOLID-STATE ELECTRONICS, 1984, 27 (07) :675-676
[10]  
Vandamme L. K. J., 1988, SOLID STATE PHENOM, V1 & 2, P153