X-RAY PHOTO-ELECTRON SPECTROSCOPY ANALYSIS OF INP INSULATOR SEMICONDUCTOR STRUCTURES PREPARED BY ANODIC-OXIDATION

被引：14

作者：

ISHII, H

HASEGAWA, H

ISHII, A

OHNO, H

机构：

[1] Department of Electrical Engineering, Faculty of Engineering, Hokkaido University, Sapporo

来源：

APPLIED SURFACE SCIENCE | 1989年 / 41-2卷

关键词：

D O I：

10.1016/0169-4332(89)90089-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

An X-ray photo-electron spectroscopy (XPS) analysis is applied to clarify the composition of the InP insulator-semiconductor structures prepared by the anodic oxidation process. The structures investigated include (i) an anodic oxide/InP structure, (ii) an Al2O3/native oxide/InP structure and (iii) a photo-CVD SiN/native oxide/InP structure. It is shown that condensed indium phosphate plays an important role in structures (i) and (ii). The composition control of the phosphate layer by anodization is demonstrated, and is explained by a simple mechinism of field driven movement of indium species. A correlation between phosphate composition and interface state density is found in structure (iii). © 1989.

引用

页码：390 / 394

页数：5

共 14 条

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