THE STEADY-STATE MODEL FOR COUPLED DEFECT-IMPURITY DIFFUSION IN SILICON

被引：11

作者：

MOREHEAD, FF

LEVER, RF

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 11期

关键词：

D O I：

10.1063/1.343728

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5349 / 5352

页数：4

共 15 条

[1]

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[5]

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[6] DOPANT DIFFUSION IN SILICON - A CONSISTENT VIEW INVOLVING NONEQUILIBRIUM DEFECTS [J].

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PFISTER, JC .

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[7]

MOREHEAD F, UNPUB

[8]

Morehead F. F., 1988, Defects in Electronic Materials. Symposium, P99

[9] ENHANCED TAIL DIFFUSION OF PHOSPHORUS AND BORON IN SILICON - SELF-INTERSTITIAL PHENOMENA [J].

MOREHEAD, FF ;

LEVER, RF .

APPLIED PHYSICS LETTERS, 1986, 48 (02) :151-153

[10] MODEL FOR DEFECT-IMPURITY PAIR DIFFUSION IN SILICON [J].

MULVANEY, BJ ;

RICHARDSON, WB .

APPLIED PHYSICS LETTERS, 1987, 51 (18) :1439-1441

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