SEMICONDUCTOR HETEROSTRUCTURE NONLINEAR POISSON EQUATION

被引：9

作者：

KROWNE, CM

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 04期

关键词：

D O I：

10.1063/1.342952

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1602 / 1614

页数：13

共 78 条

[1]

[Anonymous], 1970, HDB MATH FUNCTIONS

[2] HETEROSTRUCTURES IN III-V-OPTOELECTRONIC DEVICES [J].

BAETS, R .

SOLID-STATE ELECTRONICS, 1987, 30 (11) :1175-1182

[3] III, V-HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

BAILBE, JP ;

MARTY, A ;

REY, G .

SOLID-STATE ELECTRONICS, 1987, 30 (11) :1159-1169

[4]

BANK RE, 1983, IEEE T ELECTRON DEV, V30, P1031, DOI 10.1109/T-ED.1983.21257

[5] HIGH DOPANT AND CARRIER CONCENTRATION EFFECTS IN GALLIUM-ARSENIDE - BAND-STRUCTURE AND EFFECTIVE INTRINSIC CARRIER CONCENTRATIONS [J].

BENNETT, HS .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (08) :2866-2874

[6] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J].

BLAKEMORE, JS .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :R123-R181

[7]

COURANT R, 1965, INTRO CALCULUS ANAL, V2

[8]

DELALAMO JA, 1987, JPN J APPL PHYS 1, V26, P1860, DOI 10.1143/JJAP.26.1860

[9] ENGINEERED SCHOTTKY-BARRIER DIODES FOR THE MODIFICATION AND CONTROL OF SCHOTTKY-BARRIER HEIGHTS [J].

EGLASH, SJ ;

NEWMAN, N ;

PAN, S ;

MO, D ;

SHENAI, K ;

SPICER, WE ;

PONCE, FA ;

COLLINS, DM .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (11) :5159-5169

[10] BARRIER HEIGHTS AND ELECTRICAL-PROPERTIES OF INTIMATE METAL-ALGAAS JUNCTIONS [J].

EIZENBERG, M ;

HEIBLUM, M ;

NATHAN, MI ;

BRASLAU, N ;

MOONEY, PM .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (04) :1516-1522

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