DEPOSITION OF TUNGSTEN FILMS BY PULSED EXCIMER-LASER ABLATION TECHNIQUE

被引：11

作者：

DHOTE, AM

OGALE, SB

机构：

[1] Center for Advanced Studies in Materials Science and Solid State Physics, Department of Physics, University of Poona

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 21期

关键词：

D O I：

10.1063/1.111432

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Laser ablation deposition technique using a KrF (248 nm) excimer laser has been employed to deposit W films on Si(100) and SiO2 from W(CO)6 with high growth rate. The influence of substrate temperature on the film growth rate and resistivity has been investigated in a broad temperature range (20-500-degrees-C) at laser fluence of 0.4 J cm-2. Film resistivities within a factor of 3 of the bulk value have been observed in the substrate temperature range of 300-500-degrees-C. The crystal structure of the film deposited in this temperature range corresponds specifically to the alpha-W phase. Optical emissions from the plasma generated during the pulsed excimer laser ablation of W(CO)6 are also examined by an optical multichannel analyzer.

引用

页码：2809 / 2811

页数：3

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