INGAAS-INGAASP AVALANCHE PHOTO-DIODES AND ANALYSIS OF INTERNAL QUANTUM EFFICIENCY

被引：15

作者：

TAKANASHI, Y

HORIKOSHI, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 07期

关键词：

D O I：

10.1143/JJAP.20.1271

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1271 / 1278

页数：8

共 15 条

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[2]

CONWELL EM, 1967, SOLID STATE PHYSIC S, V9

[3]

HAYES JR, 1980, ELECTRON LETT, V16, P283

[4] INGAAS AVALANCHE PHOTO-DIODE WITH INP P-N-JUNCTION [J].

KANBE, H ;

SUSA, N ;

NAKAGOME, H ;

ANDO, H .

ELECTRONICS LETTERS, 1980, 16 (05) :163-165

[5]

NISHIDA K, 1979, APPL PHYS LETT, V34, P591

[6]

STILLMAN GE, 1977, SEMICONDUCTORS SEMIM, V12

[7] NEW INGAAS-INP AVALANCHE PHOTO-DIODE STRUCTURE FOR THE 1-1.6 MU-M WAVELENGTH REGION [J].

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NAKAGOME, H ;

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ANDO, H ;

KANBE, H .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (08) :864-870

[8] REQUIRED DONOR CONCENTRATION OF EPITAXIAL LAYERS FOR EFFICIENT INGAASP AVALANCHE PHOTO-DIODES [J].

TAKANASHI, Y ;

KAWASHIMA, M ;

HORIKOSHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (04) :693-701

[9] EFFECT OF IMPURITY DIFFUSION ON THE CHARACTERISTICS OF AVALANCHE PHOTO-DIODE [J].

TAKANASHI, Y ;

HORIKOSHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (04) :687-691

[10] NOISE PERFORMANCE OF 1.3 MU-M INGAASP AVALANCHE PHOTO-DIODE AT -190-DEGREES-C [J].

TAKANASHI, Y ;

HORIKOSHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (03) :L163-L166

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