NOISE PERFORMANCE OF 1.3 MU-M INGAASP AVALANCHE PHOTO-DIODE AT -190-DEGREES-C

被引：7

作者：

TAKANASHI, Y

HORIKOSHI, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 03期

关键词：

D O I：

10.1143/JJAP.19.L163

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L163 / L166

页数：4

共 13 条

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[6]

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[7] INGAASP HETEROSTRUCTURE AVALANCHE PHOTO-DIODES WITH HIGH AVALANCHE GAIN [J].

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[9] INGAASP-INP AVALANCHE PHOTO-DIODE PREPARED BY ZN-DIFFUSION [J].

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JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (08) :1615-1616

[10] IONIZATION COEFFICIENT OF INGAASP-INP APD [J].

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