MODELING OF MINORITY-CARRIER TRANSPORT IN HEAVILY DOPED SILICON EMITTERS

被引：109

作者：

DELALAMO, JA ^{[1
]}

SWANSON, RM ^{[1
]}

机构：

[1] STANFORD UNIV, STANFORD, CA 94305 USA

来源：

SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 11期

关键词：

D O I：

10.1016/0038-1101(87)90077-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1127 / 1136

页数：10

相关论文

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[9] MEASURING AND MODELING MINORITY-CARRIER TRANSPORT IN HEAVILY DOPED SILICON
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