THE CURRENT UNDERSTANDING OF EPITAXIAL CVD SILICON DOPING IN THE LIGHT OF MODELING AND THEORY DEVELOPMENT .3. THE LAW OF EPITAXIAL LAYER DOPING AND ITS LIMITATION

被引：4

作者：

KUHNE, H

机构：

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1987年 / 22卷 / 06期

关键词：

D O I：

10.1002/crat.2170220604

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：767 / 776

页数：10

共 13 条

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