BORON DIFFUSION IN SILICON

[1] CONDUCTIVITY MOBILITIES OF ELECTRONS AND HOLES IN HEAVILY DOPED SILICON [J]. PHYSICAL REVIEW, 1957, 108 (06): : 1416 - 1419

[2] EVALUATION OF THE SURFACE CONCENTRATION OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (03): : 699 - 710

[3] BERKSTRESSER RW, COMMUNICATION

[4] THE USE OF AN INTERFERENCE MICROSCOPE FOR MEASUREMENT OF EXTREMELY THIN SURFACE LAYERS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (05): : 1209 - 1221

[5] CRANK J, 1956, MATHEMATICS DIFFUSIO, P19

[6] DUNLAP WC, 1954, PHYS REV, V96, P822

[7] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 544 - 553

[8] DIFFUSION OF BORON INTO SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) : 303 - 305

[9] MILLEA MF, 1958, B AM PHYS SOC 2, V3, P102

[10] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J]. PHYSICAL REVIEW, 1954, 96 (01): : 28 - 35

[1] CONDUCTIVITY MOBILITIES OF ELECTRONS AND HOLES IN HEAVILY DOPED SILICON [J]. PHYSICAL REVIEW, 1957, 108 (06): : 1416 - 1419

[2] EVALUATION OF THE SURFACE CONCENTRATION OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (03): : 699 - 710

[3] BERKSTRESSER RW, COMMUNICATION

[4] THE USE OF AN INTERFERENCE MICROSCOPE FOR MEASUREMENT OF EXTREMELY THIN SURFACE LAYERS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (05): : 1209 - 1221

[5] CRANK J, 1956, MATHEMATICS DIFFUSIO, P19

[6] DUNLAP WC, 1954, PHYS REV, V96, P822

[7] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) : 544 - 553

[8] DIFFUSION OF BORON INTO SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) : 303 - 305

[9] MILLEA MF, 1958, B AM PHYS SOC 2, V3, P102

[10] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J]. PHYSICAL REVIEW, 1954, 96 (01): : 28 - 35