ETHYLDIMETHYLINDIUM FOR THE GROWTH OF INGAAS-GAAS STRAINED-LAYER LASERS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：17

作者：

YORK, PK

BEERNINK, KJ

KIM, J

COLEMAN, JJ

FERNANDEZ, GE

WAYMAN, CM

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 24期

关键词：

D O I：

10.1063/1.102003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2476 / 2478

页数：3

共 24 条

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