RADIO-FREQUENCY SHEATHS - ADJUSTABLE WAVE-FORM MODEL

被引:8
作者
HORWITZ, CM
PUZZER, T
机构
[1] Department of Electrical Engineering and Computer Science, University of New South Wales, Kensington, New South Wales
[2] Pittsburgh, PA, 15217
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 04期
关键词
Radio waves - Ion bombardment - Electrodes - Electric discharges;
D O I
10.1116/1.576596
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
An approximate analytic description of radio frequency (rf) discharge sheaths is given here. This description employs simple power-law equations, obtaining results for a family of sheath voltage waveforms. Both low-pressure (“free space”) and high-pressure (“collisional”) regimes are analyzed, yielding power-law dependences of voltages, fields, and charges on distance into the sheath. The resulting sheath model yields asymmetric discharge sheath heights 1.1-1.3 times the corresponding dc sheath model. This family of sheath voltage waveforms is shown to be consistent with experimental sheath voltage waveforms, through experimental measurements of particle arrival times at rf sputtering targets with various electrode area ratios and chamber pressures. The imposition of a nonsinusoidal waveform on the sheath has interesting implications for voltages and ion flows in the remaining regions of the discharge. Ions may be accelerated from the “presheath” region both toward and away from the sheath around a negatively biased target. This is in contrast with dc sheaths, where ions are accelerated only toward the more negative electrode. Thus, ion bombardment of both the target and the counterelectrode is indicated by this model of asymmetric rf discharges. Final sections of this paper consider the velocity of the glow electron wavefront in the sheath, and the close correspondence between these power-law solutions and sine waveforms. © 1990, American Vacuum Society. All rights reserved.
引用
收藏
页码:3132 / 3140
页数:9
相关论文
共 21 条
[1]   THE PLASMA-ETCHING OF POLYSILICON WITH CF3CL/ARGON DISCHARGES .2. MODELING OF ION-BOMBARDMENT ENERGY-DISTRIBUTIONS [J].
ALLEN, KD ;
SAWIN, HH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (11) :2326-2331
[2]  
Chapman B., 1980, GLOW DISCHARGE PROCE
[3]   POSITIVE-ION BOMBARDMENT OF SUBSTRATES IN RF DIODE GLOW-DISCHARGE SPUTTERING [J].
COBURN, JW ;
KAY, E .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) :4965-4971
[4]   INVESTIGATION OF SHEATH AT ELECTRODE IN RADIO-FREQUENCY DISCHARGE [J].
GODYAK, VA ;
OX, SN .
JOURNAL DE PHYSIQUE, 1979, 40 :809-810
[5]  
HEMENWAY CL, 1967, PHYSICAL ELECTRONICS
[6]   RADIO-FREQUENCY SHEATHS - MODELING AND EXPERIMENT [J].
HORWITZ, CM ;
PUZZER, T ;
SMITH, AM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (04) :3123-3131
[7]   RF SPUTTERING VOLTAGE DIVISION BETWEEN 2 ELECTRODES [J].
HORWITZ, CM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (01) :60-68
[8]   RADIO-FREQUENCY SPUTTERING - THE SIGNIFICANCE OF POWER INPUT [J].
HORWITZ, CM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (04) :1795-1800
[9]   APPLICATION OF RF DISCHARGES TO SPUTTERING [J].
KOENIG, HR ;
MAISSEL, LI .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) :168-&
[10]  
KOHLER K, 1985, J APPL PHYS, V57, P59, DOI 10.1063/1.335396