INTERBAND TUNNELING IN HETEROSTRUCTURE TUNNEL-DIODES

被引：27

作者：

YANG, RQ ^{[1
]}

SWEENY, M ^{[1
]}

DAY, D ^{[1
]}

XU, JM ^{[1
]}

机构：

[1] VARIAN RES CTR,PALO ALTO,CA 94303

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 03期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1109/16.75152

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new type of tunnel diodes, incorporating a wide-band tunnel barrier, is studied. The interband tunneling in such hetero-structure tunnel diodes is modeled by a two-band Schrodinger equation. For a family of InGaAs/InAlGaAs p-n junction tunnel diodes we demonstrated recently, the interband transmission coefficients are calculated and the estimated peak currents compare very favorably with experimental results.

引用

收藏

页码：442 / 446

页数：5

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