PULSED-ELECTRON-BEAM ANNEALING OF ION-IMPLANTED GAAS

被引：6

作者：

ALBERTS, HW

GAIGHER, HL

FRIEDLAND, E

机构：

[1] Department of Physics, University of Pretoria, Pretoria

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1991年 / 9卷 / 1-3期

关键词：

D O I：

10.1016/0921-5107(91)90196-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The annealing of ion-implanted damage in GaAs single crystals has been studied as a function of pulsed-electron-beam energy densities. The single crystals were implanted with 150 keV Cr+ ions at doses ranging from 1 x 10(12) to 5 x 10(15) ions cm-2 as well as with Si+ ions at a dose of 1 x 10(16) ions cm-2. The radiation damage before and after annealing was analysed with backscattering and channelling of 1.5 MeV He+ beams in conjunction with transmission electron microscopy.

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页码：331 / 335

页数：5

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