STUDIES OF BARRIER HEIGHT MECHANISMS IN METAL SILICON-NITRIDE SILICON SCHOTTKY-BARRIER DIODES

被引：12

作者：

SOBOLEWSKI, MA

HELMS, CR

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 04期

关键词：

D O I：

10.1116/1.584589

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：971 / 979

页数：9

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