PERSISTENT PHOTOCURRENT DECAY MECHANISMS BY CAPTURE OF PHOTOELECTRONS IN GAAS-ALXGA1-XAS HETEROSTRUCTURES

被引：16

作者：

HE, LX

MARTIN, KP

HIGGINS, RJ

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.36.6508

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6508 / 6519

页数：12

共 25 条

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