SUBSTRATE DISORDER-INDUCED BY A SURFACE CHEMICAL-REACTION - THE FLUORINE SILICON INTERACTION

被引：24

作者：

LO, CW ^{[1
]}

VAREKAMP, PR ^{[1
]}

SHUH, DK ^{[1
]}

DURBIN, TD ^{[1
]}

CHAKARIAN, V ^{[1
]}

YARMOFF, JA ^{[1
]}

机构：

[1] LAWRENCE BERKELEY LAB,DIV MAT SCI,BERKELEY,CA 94720

来源：

SURFACE SCIENCE | 1993年 / 292卷 / 1-2期

关键词：

D O I：

10.1016/0039-6028(93)90399-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Si(111) surfaces etched by XeF2 are studied with high-resolution soft X-ray photoelectron spectroscopy. After a sufficient exposure to XeF2, a thick fluorosilyl reaction layer forms on the surface. An inelastic loss feature in the Si2p core-level spectra collected from these surfaces indicates the presence of Si defects that have been created by the reaction. These defects are located both at the reaction layer/substrate interface and in the near-surface region of the substrate.-As suggested by earlier theoretical studies, it is proposed that the defects in the substrate are created by the excess heat liberated from the formation of exothermic Si-F bonds. Reaction-induced defects are an integral and essential part of the etching process, as they enable F to bond with subsurface Si and form the characteristic fluorosilyl reaction layer.

引用

页码：171 / 181

页数：11

共 35 条

[1] STUDY OF FLUORINE (XEF2) ADSORPTION AND OF OXYGEN FLUORINE COADSORPTION ON SILICON USING INFRARED REFLECTION ABSORPTION-SPECTROSCOPY [J].