DOPING OF ZNTE BY MOLECULAR-BEAM EPITAXY

被引：89

作者：

TAO, IW

JURKOVIC, M

WANG, WI

机构：

[1] Department of Electrical Engineering, Columbia University, New York

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 14期

关键词：

D O I：

10.1063/1.111775

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have grown Cl-doped ZnTe under different growth conditions and N-doped ZnTe on different orientations. n-type doping was achieved for the first time by proper control of the Zn/Te beam flux. A p- type doping level of 1 x 10(20) cm-3, which is the highest reported, was obtained by substrate tilting. These phenomena can be analyzed by the surface bonding structure analogous to the impurity concentration in the III-V compound semiconductors.

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页码：1848 / 1849

页数：2

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