DIFFUSION OF TIN INTO GAAS FROM DOPED SIO2 FILM SOURCES

[1] NON-DESTRUCTIVE MEASUREMENT OF SURFACE CONCENTRATIONS AND JUNCTION DEPTHS OF DIFFUSED SEMICONDUCTOR LAYERS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (04) : 397 - &

[2] BERMAN R, PRIVATE COMMUNICATIO

[3] THE JUNCTION DEPTH OF CONCENTRATION-DEPENDENT DIFFUSION - ZINC IN III-V COMPOUNDS [J]. SOLID-STATE ELECTRONICS, 1964, 7 (12) : 853 - 859

[4] THE DIFFUSION OF TIN AND SELENIUM IN GALLIUM ARSENIDE [J]. SOLID-STATE ELECTRONICS, 1963, 6 (04) : 383 - 387

[5] KAUFMAN HC, 1961, HANDBOOK ORGANOMETAL

[6] MUENCH WV, 1966, IBM J RES DEV, V10, P438

[7] MUENCH WV, 1966, SOLID STATE ELECTRON, V9, P619

[8] DIFFUSION FROM A PLANE FINITE SOURCE INTO A SECOND PHASE WITH SPECIAL REFERENCE TO OXIDE-FILM DIFFUSION SOURCES ON SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (05) : 548 - +

[9] INFRARED ABSORPTION IN N-TYPE SILICON [J]. PHYSICAL REVIEW, 1957, 108 (02): : 268 - 271

[10] Van der Pauw L. J., 1958, PHILIPS RES REP, V12, P1

[1] NON-DESTRUCTIVE MEASUREMENT OF SURFACE CONCENTRATIONS AND JUNCTION DEPTHS OF DIFFUSED SEMICONDUCTOR LAYERS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (04) : 397 - &

[2] BERMAN R, PRIVATE COMMUNICATIO

[3] THE JUNCTION DEPTH OF CONCENTRATION-DEPENDENT DIFFUSION - ZINC IN III-V COMPOUNDS [J]. SOLID-STATE ELECTRONICS, 1964, 7 (12) : 853 - 859

[4] THE DIFFUSION OF TIN AND SELENIUM IN GALLIUM ARSENIDE [J]. SOLID-STATE ELECTRONICS, 1963, 6 (04) : 383 - 387

[5] KAUFMAN HC, 1961, HANDBOOK ORGANOMETAL

[6] MUENCH WV, 1966, IBM J RES DEV, V10, P438

[7] MUENCH WV, 1966, SOLID STATE ELECTRON, V9, P619

[8] DIFFUSION FROM A PLANE FINITE SOURCE INTO A SECOND PHASE WITH SPECIAL REFERENCE TO OXIDE-FILM DIFFUSION SOURCES ON SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (05) : 548 - +

[9] INFRARED ABSORPTION IN N-TYPE SILICON [J]. PHYSICAL REVIEW, 1957, 108 (02): : 268 - 271

[10] Van der Pauw L. J., 1958, PHILIPS RES REP, V12, P1