0.25-MU-M GATE MILLIMETER-WAVE ION-IMPLANTED GAAS-MESFETS

被引：9

作者：

WANG, GW

FENG, M

LAU, CL

ITO, C

LEPKOWSKI, TR

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 05期

关键词：

D O I：

10.1109/55.31715

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：186 / 188

页数：3

共 12 条

[1] UNUSUAL C-V PROFILES OF SI-IMPLANTED (211) GAAS SUBSTRATES AND UNUSUALLY LOW-NOISE MESFETS FABRICATED ON THEM [J].

BANERJEE, I ;

CHYE, PW ;

GREGORY, PE .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (01) :10-12

[2] 0.1-MU-M GATE-LENGTH PSEUDOMORPHIC HEMTS [J].

CHAO, PC ;

TIBERIO, RC ;

DUH, KHG ;

SMITH, PM ;

BALLINGALL, JM ;

LESTER, LF ;

LEE, BR ;

JABRA, A ;

GIFFORD, GG .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (10) :489-491

[3]

CIRILLO NC, 1988, JAN HEMT S WORKSH FO

[4]

EASTMAN LF, 1988, JAN HEMT S WORKSH FO

[5] LOW-NOISE GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR MADE BY ION-IMPLANTATION [J].

FENG, M ;

EU, VK ;

KANBER, H ;

WATKINS, E ;

SCHELLENBERG, JM ;

YAMASAKI, H .

APPLIED PHYSICS LETTERS, 1982, 40 (09) :802-804

[6]

FENG M, 1984, APPL PHYS LETT, V44, P231, DOI 10.1063/1.94681

[7] GAAS-MESFETS MADE BY ION-IMPLANTATION INTO MOCVD BUFFER LAYERS [J].

FENG, M ;

EU, VK ;

ZIELINSKI, T ;

KANBER, H ;

HENDERSON, WB .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (01) :18-20

[8] OPTIMAL NOISE-FIGURE OF MICROWAVE GAAS-MESFETS [J].

FUKUI, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (07) :1032-1037

[9] DC AND MICROWAVE CHARACTERISTICS OF A HIGH-CURRENT DOUBLE INTERFACE GAAS/INGAAS/ALGAAS PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTOR [J].

HENDERSON, T ;

KLEM, J ;

PENG, CK ;

GEDYMIN, JS ;

KOPP, W ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1986, 48 (16) :1080-1082

[10] MICROWAVE PERFORMANCE OF A QUARTER-MICROMETER GATE LOW-NOISE PSEUDOMORPHIC INGAAS/ALGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTOR [J].

HENDERSON, T ;

AKSUN, MI ;

PENG, CK ;

MORKOC, H ;

CHAO, PC ;

SMITH, PM ;

DUH, KHG ;

LESTER, LF .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) :649-651

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