RELATIONSHIP BETWEEN HOLE TRAPPING AND INTERFACE STATE GENERATION IN METAL-OXIDE-SILICON STRUCTURES

被引：81

作者：

WANG, SJ

SUNG, JM

LYON, SA

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 17期

关键词：

D O I：

10.1063/1.99690

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1431 / 1433

页数：3

共 16 条

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[5]

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LAI, SK .

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[8]

LENAHAN PM, 1983, J APPL PHYS, V54, P1457, DOI 10.1063/1.332171

[9] A FRAMEWORK FOR UNDERSTANDING RADIATION-INDUCED INTERFACE STATES IN SIO2 MOS STRUCTURES [J].

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[10] STRUCTURAL DAMAGE AT THE SI/SIO2 INTERFACE RESULTING FROM ELECTRON INJECTION IN METAL-OXIDE-SEMICONDUCTOR DEVICES [J].

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