RAMAN-SCATTERING MEASUREMENT OF SILICON-ON-INSULATOR SUBSTRATES FORMED BY HIGH-DOSE OXYGEN-ION IMPLANTATION

被引：42

作者：

TAKAHASHI, J

MAKINO, T

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 01期

关键词：

D O I：

10.1063/1.340467

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：87 / 91

页数：5

共 30 条

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