PHOTOLUMINESCENCE STUDY OF THE GALLIUM DEFECT SPECTRUM AT ALMOST-EQUAL-TO 1.049 EV (GA2) IN IRRADIATED SILICON

被引：10

作者：

SCHALL, U ^{[1
]}

THONKE, K ^{[1
]}

SAUER, R ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 1,FED REP GER

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1986年 / 137卷 / 01期

关键词：

D O I：

10.1002/pssb.2221370131

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：305 / 317

页数：13

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