MICROSTRUCTURE OF POROUS SILICON AND ITS CORRELATION WITH PHOTOLUMINESCENCE

被引:28
作者
TAKASUKA, E
KAMEI, K
机构
[1] Sumitomo Metal Industries, Ltd., Amagasaki, Hyogo 660
关键词
D O I
10.1063/1.112345
中图分类号
O59 [应用物理学];
学科分类号
摘要
Microstructure of porous silicon (PS) was observed through high-resolution transmission electron microscope to study a relationship between the microstructure and a photoluminescence (PL) from PS. Three PS samples were made through anodization with different current densities. The samples had different PL spectra and were supposed to have different microstructures. Threadlike structures of Si and Si crystallites in the PS layer were observed in all the samples. The threadlike structure has the same density in all samples and has very little structural change, in spite of a significant change of PL spectra. The density of the Si crystallites varies for the samples and has a strong correlation with the PL intensity. No particular change of crystallites shape was observed. The size of the crystallites ranges from a few nanometers to a few tens of nanometers. Although no positive evidence to a quantum confinement is indicated, the Si crystallites are responsible for a light emission from PS.
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页码:484 / 486
页数:3
相关论文
共 14 条
[1]   VISIBLE-LIGHT EMISSION FROM POROUS SILICON [J].
BUGAJSKI, M ;
WESOLOWSKI, M ;
LEWANDOWSKI, W ;
ORNOCH, J ;
KATCKI, J .
ACTA PHYSICA POLONICA A, 1992, 82 (05) :914-918
[2]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[3]   MICROSTRUCTURE OF VISIBLY LUMINESCENT POROUS SILICON [J].
COLE, MW ;
HARVEY, JF ;
LUX, RA ;
ECKART, DW ;
TSU, R .
APPLIED PHYSICS LETTERS, 1992, 60 (22) :2800-2802
[4]   VISIBLE-LIGHT EMISSION DUE TO QUANTUM SIZE EFFECTS IN HIGHLY POROUS CRYSTALLINE SILICON [J].
CULLIS, AG ;
CANHAM, LT .
NATURE, 1991, 353 (6342) :335-338
[5]   POROUS SILICON FORMATION - A QUANTUM WIRE EFFECT [J].
LEHMANN, V ;
GOSELE, U .
APPLIED PHYSICS LETTERS, 1991, 58 (08) :856-858
[6]   MICROSTRUCTURE OF POROUS SILICON [J].
NAKAJIMA, A ;
OHSHIMA, Y ;
ITAKURA, T ;
GOTO, Y .
APPLIED PHYSICS LETTERS, 1993, 62 (21) :2631-2633
[7]   MICROSTRUCTURE OF VISIBLE-LIGHT EMITTING POROUS SILICON [J].
NISHIDA, A ;
NAKAGAWA, K ;
KAKIBAYASHI, H ;
SHIMADA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (9A) :L1219-L1222
[8]   STUDY OF LUMINESCENT REGION IN ANODIZED POROUS SILICONS BY PHOTOLUMINESCENCE IMAGING AND THEIR MICROSTRUCTURES [J].
NOGUCHI, N ;
SUEMUNE, I ;
YAMANISHI, M ;
HUA, GC ;
OTSUKA, N .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (4B) :L490-L493
[9]  
PETROVAKOCH V, 1992, MATER RES SOC SYMP P, V256, P41
[10]   CURRENT-INDUCED LIGHT-EMISSION FROM A POROUS SILICON DEVICE [J].
RICHTER, A ;
STEINER, P ;
KOZLOWSKI, F ;
LANG, W .
IEEE ELECTRON DEVICE LETTERS, 1991, 12 (12) :691-692