MICROSCOPIC MODEL FOR HOT-ELECTRON TRAPPING AND DETRAPPING IN SILICON DIOXIDE

We present a microscopic theory for high-field stressing and oxide degradation in SiO2. Hot electrons lead to a charge buildup in the oxide according to a dynamical trapping and detrapping model, where detrapping events are modeled as trap-to-band impact ionization processes. Electronic distributions obtained from Monte Carlo high-field transport simulations are used to determine ensemble averaged detrapping cross sections and experimentally observed flat-band voltage shifts. In comparing our microscopic theory to previously employed empirical rate equation models, we find significant differences in the predicted spatial distribution of oxide charge.