RAMAN-SCATTERING BY OPTICAL PHONONS IN IN1-Y-ZALYGAZAS LATTICE MATCHED TO INP

被引：19

作者：

BORROFF, R ^{[1
]}

MERLIN, R ^{[1
]}

CHIN, A ^{[1
]}

BHATTACHARYA, PK ^{[1
]}

机构：

[1] UNIV MICHIGAN, DEPT ELECT ENGN & COMP SCI, ANN ARBOR, MI 48109 USA

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 17期

关键词：

D O I：

10.1063/1.100441

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1652 / 1653

页数：2

共 12 条

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[5] MBE GROWTH OF INGAALAS LATTICE-MATCHED TO INP BY PULSED MOLECULAR-BEAM METHOD [J].

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[6] RESONANT RAMAN-SCATTERING AT THE SADDLE-POINT SINGULARITY IN INXGA1-XAS [J].

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[7]

KAKIMOTO K, 1982, APPL PHYS LETT, V40, P826, DOI 10.1063/1.93281

[8] RAMAN-SCATTERING FROM ALGAINP [J].

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SATOH, S .

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[9] PREPARATION OF (ALXGA1-X)YIN1-YAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.5,Y = 0.47) LATTICE MATCHED TO INP SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

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[10] LIQUID-PHASE EPITAXIAL-GROWTH OF LATTICE-MATCHED AL0.48IN0.52AS ON INP [J].

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