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CHARACTERIZATION CONTROL AND USE OF DIELECTRIC CHARGE EFFECTS IN SILICON TECHNOLOGY
被引:17
作者
:
SZEDON, JR
论文数:
0
引用数:
0
h-index:
0
SZEDON, JR
HANDY, RM
论文数:
0
引用数:
0
h-index:
0
HANDY, RM
机构
:
来源
:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY
|
1969年
/ 6卷
/ 01期
关键词
:
D O I
:
10.1116/1.1492613
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1 / +
页数:1
相关论文
共 39 条
[11]
BARRIER ENERGIES IN METAL-SILICON DIOXIDE-SILICON STRUCTURES
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
SNOW, EH
MEAD, CA
论文数:
0
引用数:
0
h-index:
0
MEAD, CA
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1966,
27
(11-1)
: 1873
-
&
[12]
CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
SKLAR, M
论文数:
0
引用数:
0
h-index:
0
SKLAR, M
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
SNOW, EH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(03)
: 266
-
+
[13]
HALL MEASUREMENTS ON SILICON FIELD EFFECT TRANSISTOR STRUCTURES
FOWLER, AB
论文数:
0
引用数:
0
h-index:
0
FOWLER, AB
HOCHBERG, F
论文数:
0
引用数:
0
h-index:
0
HOCHBERG, F
FANG, F
论文数:
0
引用数:
0
h-index:
0
FANG, F
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1964,
8
(04)
: 427
-
&
[14]
FRANKL DR, 1967, ELECTRICAL PROPERTIE
[15]
INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
SNOW, EH
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
[J].
SOLID-STATE ELECTRONICS,
1965,
8
(02)
: 145
-
+
[16]
EFFECTS OF OXIDE TRAPS ON MOS CAPACITANCE
HEIMAN, FP
论文数:
0
引用数:
0
h-index:
0
HEIMAN, FP
WARFIELD, G
论文数:
0
引用数:
0
h-index:
0
WARFIELD, G
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1965,
ED12
(04)
: 167
-
&
[17]
THEORY OF SURFACE STATES
HEINE, V
论文数:
0
引用数:
0
h-index:
0
HEINE, V
[J].
PHYSICAL REVIEW,
1965,
138
(6A):
: 1689
-
&
[18]
EXPERIMENTAL STUDY OF ORIGIN OF SURFACE STATES ON CLEAN SURFACES
HENZLER, M
论文数:
0
引用数:
0
h-index:
0
HENZLER, M
[J].
SURFACE SCIENCE,
1968,
9
(01)
: 31
-
&
[19]
PROTON AND SODIUM TRANSPORT IN SIO2 FILMS
HOFSTEIN, SR
论文数:
0
引用数:
0
h-index:
0
HOFSTEIN, SR
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1967,
ED14
(11)
: 749
-
+
[20]
STABILIZATION OF MOS DEVICES
HOFSTEIN, SR
论文数:
0
引用数:
0
h-index:
0
HOFSTEIN, SR
[J].
SOLID-STATE ELECTRONICS,
1967,
10
(07)
: 657
-
+
←
1
2
3
4
→
共 39 条
[11]
BARRIER ENERGIES IN METAL-SILICON DIOXIDE-SILICON STRUCTURES
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
SNOW, EH
MEAD, CA
论文数:
0
引用数:
0
h-index:
0
MEAD, CA
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1966,
27
(11-1)
: 1873
-
&
[12]
CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
SKLAR, M
论文数:
0
引用数:
0
h-index:
0
SKLAR, M
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
SNOW, EH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(03)
: 266
-
+
[13]
HALL MEASUREMENTS ON SILICON FIELD EFFECT TRANSISTOR STRUCTURES
FOWLER, AB
论文数:
0
引用数:
0
h-index:
0
FOWLER, AB
HOCHBERG, F
论文数:
0
引用数:
0
h-index:
0
HOCHBERG, F
FANG, F
论文数:
0
引用数:
0
h-index:
0
FANG, F
[J].
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1964,
8
(04)
: 427
-
&
[14]
FRANKL DR, 1967, ELECTRICAL PROPERTIE
[15]
INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
SNOW, EH
SAH, CT
论文数:
0
引用数:
0
h-index:
0
SAH, CT
[J].
SOLID-STATE ELECTRONICS,
1965,
8
(02)
: 145
-
+
[16]
EFFECTS OF OXIDE TRAPS ON MOS CAPACITANCE
HEIMAN, FP
论文数:
0
引用数:
0
h-index:
0
HEIMAN, FP
WARFIELD, G
论文数:
0
引用数:
0
h-index:
0
WARFIELD, G
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1965,
ED12
(04)
: 167
-
&
[17]
THEORY OF SURFACE STATES
HEINE, V
论文数:
0
引用数:
0
h-index:
0
HEINE, V
[J].
PHYSICAL REVIEW,
1965,
138
(6A):
: 1689
-
&
[18]
EXPERIMENTAL STUDY OF ORIGIN OF SURFACE STATES ON CLEAN SURFACES
HENZLER, M
论文数:
0
引用数:
0
h-index:
0
HENZLER, M
[J].
SURFACE SCIENCE,
1968,
9
(01)
: 31
-
&
[19]
PROTON AND SODIUM TRANSPORT IN SIO2 FILMS
HOFSTEIN, SR
论文数:
0
引用数:
0
h-index:
0
HOFSTEIN, SR
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1967,
ED14
(11)
: 749
-
+
[20]
STABILIZATION OF MOS DEVICES
HOFSTEIN, SR
论文数:
0
引用数:
0
h-index:
0
HOFSTEIN, SR
[J].
SOLID-STATE ELECTRONICS,
1967,
10
(07)
: 657
-
+
←
1
2
3
4
→