GROWTH OF GAINAS AND GAINASP LATTICE MATCHED TO INP BY METALORGANIC MBE

This study reports on the growth of GaInAs and GaInAsP single layers and heterostructures by metalorganic MBE (MOMBE) using trimethylindium (TMI), triethylgallium (TEG), arsine (AsH3) and phosphine (PH3) as starting materials. The growth parameters were optimized for a temperature range where also high quality InP is available. Ternary and quaternary layers exhibiting excellent uniformity across a wafer diameter of 3 inches were obtained with regard to layer thickness (less-than-or-equal-to 1.5%) and material composition. SIMS measurements on GaInAs/InP and GaInAsP/InP double heterostructures revealed even for the problematic element As an abrupt modulation of about three orders of magnitude or more depending on the structure.