SCANNING-TUNNELING-MICROSCOPY STUDY OF 2-DIMENSIONAL NUCLEI ON GAAS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：10

作者：

KASU, M

KOBAYASHI, N

机构：

[1] NTT Basic Research Laboratories, Atsugi, 243-01

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 145卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)91038-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Two-dimensional (2D) nuclei of GaAs grown on a singular (001) surface by metalorganic chemical vapor deposition have been observed by using high-vacuum scanning tunneling microscopy (STM). The 2D nuclei extend in the [110] direction, which is opposite to that of molecular beam epitaxy growth. The 2D nucleus-number density is measured from the STM images, and the relation between the density and the surface diffusion coefficient of Ga species is obtained from simulation of growth at the surface. The surface diffusion coefficient is estimated to be 10(-7.0+/-0.9) cm(2)/s at 530 degrees C.

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页码：120 / 125

页数：6

相关论文

共 17 条

[1] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J].

BURTON, WK ;

CABRERA, N ;

FRANK, FC .

PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) :299-358

[2] TIME-RESOLVED X-RAY-SCATTERING STUDIES OF LAYER-BY-LAYER EPITAXIAL-GROWTH [J].

FUOSS, PH ;

KISKER, DW ;

LAMELAS, FJ ;

STEPHENSON, GB ;

IMPERATORI, P ;

BRENNAN, S .

PHYSICAL REVIEW LETTERS, 1992, 69 (19) :2791-2794

[3] DISTRIBUTIONS OF GROWTH-RATES ON PATTERNED SURFACES MEASURED BY SCANNING MICROPROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION [J].

HATA, M ;

ISU, T ;

WATANABE, A ;

KATAYAMA, Y .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04) :692-696

[4] INSITU SCANNING TUNNELING MICROSCOPY OBSERVATION OF SURFACE-MORPHOLOGY OF GAAS(001) GROWN BY MOLECULAR-BEAM EPITAXY [J].

HELLER, EJ ;

LAGALLY, MG .

APPLIED PHYSICS LETTERS, 1992, 60 (21) :2675-2677

[5] EQUILIBRIUM MULTIATOMIC STEP STRUCTURE OF GAAS(001) VICINAL SURFACES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

KASU, M ;

KOBAYASHI, N .

APPLIED PHYSICS LETTERS, 1993, 62 (11) :1262-1264

[6] SCANNING-TUNNELING-MICROSCOPY OBSERVATION OF MONOLAYER STEPS ON GAAS(001) VICINAL SURFACES GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

KASU, M ;

KOBAYASHI, N ;

YAMAGUCHI, H .

APPLIED PHYSICS LETTERS, 1993, 63 (05) :678-680

[7] MULTIATOMIC STEPS ON METALORGANIC CHEMICAL VAPOR DEPOSITION-GROWN GAAS VICINAL SURFACES STUDIED BY ATOMIC FORCE MICROSCOPY [J].

KASU, M ;

FUKUI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (7A) :L864-L866

[8] STEP-DENSITY DEPENDENCE OF GROWTH-RATE ON VICINAL SURFACE OF MOCVD [J].

KASU, M ;

SAITO, H ;

FUKUI, T .

JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) :406-410

[9] SCANNING-TUNNELING-MICROSCOPY STUDY OF GAAS STEP STRUCTURES ON VICINAL SUBSTRATE GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

KASU, M ;

KOBAYASHI, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (1B) :712-715

[10] ACTIVATION-ENERGY FOR SURFACE-DIFFUSION OF SI ON SI(001) - A SCANNING-TUNNELING-MICROSCOPY STUDY [J].

MO, YW ;

KLEINER, J ;

WEBB, MB ;

LAGALLY, MG .

PHYSICAL REVIEW LETTERS, 1991, 66 (15) :1998-2001