SCANNING-TUNNELING-MICROSCOPY STUDY OF 2-DIMENSIONAL NUCLEI ON GAAS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引:10
作者
KASU, M
KOBAYASHI, N
机构
[1] NTT Basic Research Laboratories, Atsugi, 243-01
关键词
D O I
10.1016/0022-0248(94)91038-3
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Two-dimensional (2D) nuclei of GaAs grown on a singular (001) surface by metalorganic chemical vapor deposition have been observed by using high-vacuum scanning tunneling microscopy (STM). The 2D nuclei extend in the [110] direction, which is opposite to that of molecular beam epitaxy growth. The 2D nucleus-number density is measured from the STM images, and the relation between the density and the surface diffusion coefficient of Ga species is obtained from simulation of growth at the surface. The surface diffusion coefficient is estimated to be 10(-7.0+/-0.9) cm(2)/s at 530 degrees C.
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页码:120 / 125
页数:6
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