CRITICAL LAYER THICKNESS OF IN0.82GA0.18AS/INP QUANTUM-WELLS

被引：3

作者：

LECORRE, A

DUREL, S

CLEROT, F

LAMBERT, B

POUDOULEC, A

SALAUN, S

LECROSNIER, D

机构：

[1] CNET LAB, OCM, F-22300 Lannion, Route de Trégastel

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 120卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90417-H

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We present results on a study of strained In0.82Ga0.18As/InP quantum wells (QWs) grown by gas source MBE. From transmission electron microscopy, we find that the onset of dislocation creation occurs for thicknesses around 60 angstrom. Strain release is found to induce a dramatic effect on the carrier lifetime as shown by time-resolved photoluminescence technique: lifetimes values of 2 ns are measured on QWs with thicknesses of 18 and 40 angstrom, but drop to 60 ps on a 64 angstrom thick QW.

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页码：353 / 356

页数：4

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